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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK4057
SWITCHING N-CHANNEL POWER MOSFET
DESCRIPTION
The 2SK4057 is N-channel MOSFET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.
FEATURES
* Low on-state resistance RDS(on)1 = 15.0 m MAX. (VGS = 10 V, ID = 15 A) * Low QGD: QGD = 2.8 nC TYP. * 4.5 V drive available
ORDERING INFORMATION
PART NUMBER PACKAGE
Note Note Note
(TO-251)

2SK4057(1)-S27-AY 2SK4057-ZK-E1-AY 2SK4057-ZK-E2-AY
TO-251 (MP-3-b) TO-252 (MP-3ZK) TO-252 (MP-3ZK)
Note Pb-free (This product does not contain Pb in external electrode.) (TO-252)
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25C) Drain Current (pulse)
Note1
VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg
25 20 30 100 19 1.0 150 -55 to +150 17 28.9
V V A A W W C C A mJ
Total Power Dissipation (TC = 25C) Total Power Dissipation Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note2 Note2
IAS EAS
Notes 1. PW 10 s, Duty Cycle 1% 2. Starting Tch = 25C, VDD = 12 V, RG = 25 , VGS = 20 0 V, L = 100 H
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.
Document No. D18034EJ2V0DS00 (2nd edition) Date Published March 2007 NS CP(K) Printed in Japan
2006
The mark shows major revised points. The revised points can be easily searched by copying an "" in the PDF file and specifying it in the "Find what:" field.
2SK4057
ELECTRICAL CHARACTERISTICS (TA = 25C)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance
Note Note
SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2
TEST CONDITIONS VDS = 25 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 7.5 A VGS = 10 V, ID = 15 A VGS = 4.5 V, ID = 15 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 12 V, ID = 15 A VGS = 10 V RG = 3
MIN.
TYP.
MAX. 10 100
UNIT
A
nA V S
1.5 5
2.1 9.4 11.4 18.5 720 210 90 7.1 3.3 23 5.1
2.5
Drain to Source On-state Resistance
15.0 25.0
m m pF pF pF ns ns ns ns nC nC nC
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Gate Resistance Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Note
Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD RG VF(S-D) trr Qrr
VDD = 12 V VGS = 12 V ID = 30 A
14.5 1.9 2.8 3.4
IF = 30 A, VGS = 0 V IF = 30 A, VGS = 0 V di/dt = 100 A/s
0.95 26 22
1.5
V ns nC
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 PG. VGS = 20 0 V 50
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L VDD PG. RG
VGS RL VDD VDS
90% 90% 10% 10%
VGS
Wave Form
0
10%
VGS
90%
BVDSS IAS ID VDD VDS
VGS 0 = 1 s Duty Cycle 1%
VDS
VDS
Wave Form
0 td(on) ton
tr
td(off) toff
tf
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = 2 mA PG. 50
RL VDD
2
Data Sheet D18034EJ2V0DS
2SK4057
TYPICAL CHARACTERISTICS (TA = 25C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA dT - Percentage of Rated Power - % TOTAL POWER DISSIPATION vs. CASE TEMPERATURE
20
120 100 80 60 40 20 0 0 25 50 75 100 125 150 175
TC - Case Temperature - C PT - Total Power Dissipation - W
15
10
5
0 0 25 50 75 100 125 150 175
TC - Case Temperature - C
FORWARD BIAS SAFE OPERATING AREA
1000
ID(pulse)
DRAIN CURRENT vs CASE TEMPERATURE
35 30
ID - Drain Current - A
ID - Drain Current - A
100
ID(DC)
P/W = 100 s
25 20 15 10 5 0
10
RDS(on) Limited (VGS =10 V)
1 ms
1
Power Dissipation TC = 25C Single pulse
10 ms
0.1 0.1 1 10 100
0
50
100
150
200
VDS - Drain to Source Voltage - V
TC - Case Temperature - C
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
rth(t) - Transient Thermal Resistance - C/W
1000 Rth(ch-A) = 125C/W 100
10
Rth(ch-C) = 6.58C/W
1
Single Pulse
0.1
100
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet D18034EJ2V0DS
3
2SK4057
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS
100
100 VGS = 10 V
ID - Drain Current - A
ID - Drain Current - A
10 1 0.1 0.01
50 4.5 V Pulsed 0 0 1 2 3 4
VDS - Drain to Source Voltage - V
Tch = -55C -25C 25C 50C 75C 125C 150C
Tc h= 55
VDS = 10 V Pulsed 0 1 2 3 4 5
0.001
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
| yfs | - Forward Transfer Admittance - S
3
VGS(off) - Gate Cut-off Voltage - V
100
2.5 2 1.5 1 0.5 0 -75 -25 25 75
VDS = 10 V ID = 1 mA
10
Tch = -55C -25C 25C 50C 75C 125C 150C
1 VDS = 10 V Pulsed 0.1 0.1 1 10 100
125
175
Tch - Channel Temperature - C
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE
RDS(on) - Drain to Source On-state Resistance - m
Pulsed
RDS(on) - Drain to Source On-state Resistance - m
50 40 30 20 10
50 45 40 35 30 25 20 15 10 5 0 0 5 10 15 20
VGS - Gate to Source Voltage - V
Pulsed ID = 30 A 15 A 6A
VGS = 4.5 V
10 V 0 1 10 100 1000
ID - Drain Current - A
4
Data Sheet D18034EJ2V0DS
2SK4057
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
RDS(on) - Drain to Source On - State Resistance - m
35 VGS = 4.5 V
10000
25 20 15 10 5 0 -75 -25 25 75 125 175 ID= 15 A Pulsed 10 V
Ciss, Coss, Crss - Capacitance - pF
30
1000
Ciss Coss
100 Crss VGS = 0 V f = 1 MHz 10 0.1 1 10 100
VDS - Drain to Source Voltage - V
Tch - Channel Temperature - C
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
100
td(on), tr, td(off), tf - Switching Time - ns
VDS - Drain to Source Voltage - V
20 15
VDD = 20 V 12 V
10 VGS 8 6
td(off ) 10 td(on) tf tr 1 0.1 1 10 100
ID - Drain Current - A
10 4 5 0 0 5 10 15
QG - Gate Charge - nC
VDS
2 0
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT
1000 100 10 1 0.1 Pulsed 0.01 0 0.5 1 1.5
VF(S-D) - Source to Drain Voltage - V
1000 VGS = 10 V 4.5 V 0V
trr - Reverse Recovery Time - ns
IF - Diode Forward Current - A
di/dt = 100 A/s VGS = 0 V 100
10
1 0.1 1 10 100
IF - Diode Forward Current - A
Data Sheet D18034EJ2V0DS
5
VGS - Gate to Source Voltage - V
VDD = 12 V VGS = 10 V RG = 3
25
ID = 30 A
12
2SK4057
SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD
100
SINGLE AVALANCHE ENERGY DERATING FACTOR
120
Energy Derating Factor - %
IAS - Single Avalanche Current - A
100 80 60 40 20 0
IAS = 17 A EAS = 28.9 mJ 10 VDD = 12 V VGS = 20 0 V RG = 25 Starting Tch = 25C 1 0.01 0.1 1 10
VDD = 12 V RG = 25 VGS = 20 0 V IAS 17 A
25
50
75
100
125
150
L - Inductive Load - mH
Starting Tch - Starting Channel Temperature - C
6
Data Sheet D18034EJ2V0DS
2SK4057
PACKAGE DRAWINGS (Unit: mm)
1) TO-251 (MP-3-b)
1.06 TYP.
6.60.2 5.3 TYP. 4 2.30.1 0.50.1
1.0 TYP.
2) TO-252 (MP-3ZK)
6.50.2 5.1 TYP. 4.3 MIN. 4
2.30.1 0.50.1 No Plating
6.10.2
1.10.13
4.13 TYP.
1.14 MAX.
1
0.8
2
3
No Plating 0 to 0.25 0.50.1 1.0
0.760.12 2.3 TYP. 2.3 TYP.
0.50.1
1.14 MAX. 2.3 2.3
0.760.12
1.04 TYP.
1.Gate 2.Drain 3.Source 4.Fin (Drain)
1. Gate 2. Drain 3. Source 4. Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Gate
Body Diode
Source
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred.
0.51 MIN.
1
2
3
6.10.2 10.4 MAX. (9.8 TYP.)
11.25 TYP.
4.0 MIN.
Data Sheet D18034EJ2V0DS
7
2SK4057
* The information in this document is current as of March, 2007. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. * NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. * NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above).
M8E 02. 11-1

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